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ggNMOS (grounded-gated NMOS)

ggNMOS intro: For decades, a traditional workhorse device for ESD protection for standard applications in CMOS technology has been the grounded-gate NMOS device (ggNMOS). Nevertheless, we have been explaining the operation of this device countless times, including as recently as 3 weeks ago. So, it is time for a short blog article. The schematic of…

Let’s talk about 2023

Sofics’ CEO outlook for 2023… 2023 will be a year of opportunity to invest in our readiness to grow and flourish in 2024. Whatever your semiconductor business, your key assets: team, skills, technology, processes, and reputation, should not go to waste.

Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

Sofics’ 2021 IEDS publication. Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

New opportunities for automotive LIN interfaces

Due to the semiconductor shortage in 2021 everyone realized that cars these days integrate a lot of electronics. The average number of computer chips per car has increased a lot in the last decade. It is clear that the new applications require high-speed interconnects that are not possible with the initial, low-speed interface types. But…

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About SOFICS

Sofics is a foundry-independent semiconductor IP provider. In the last 20 years our engineers supported 100+ fabless companies worldwide with on-chip ESD protection, custom/specialty Analog I/O’s and PHY’s on multiple foundries.

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