Optimized Local I/O ESD Protection in FinFET Technology for 2.5D and 3D hybrid integration

Semiconductor companies using 2.5D and 3D hybrid integration need to consider Electrostatic Discharge (ESD) protection early in the design, even for die-2-die interfaces that remain inside the package. There are several challenges but also opportunities. The use of a local ESD protection clamp at the TSV offers more robustness, higher performance, more flexibility, all in a strongly reduced silicon footprint.

ESD protection for 2.5D and 3D packages

More and more companies are turning to advanced semiconductor packaging. This trend has an effect on ESD protection. Earlier in 2021, Sofics submited a paper for the IP-SOC USA conference about ESD protection for 2.5D and 3D packaging. The abstract, the presentation and video are available here.

ESD protection for 2.5D and 3D packages

A growing number of semiconductor applications are turning to 2.5D and 3D integration. Integrating multiple dies in a single package can reduce total power consumption, reduce required PCB area, enhance performance and it can speed up development cycles.

It is important to consider Electrostatic Discharge (ESD) protection early in the design phase. The 2.5D and 3D hybrid integration introduces new ESD challenges but also opportunities.