Optimized Local I/O ESD Protection in FinFET Technology for 2.5D and 3D hybrid integration

Semiconductor companies using 2.5D and 3D hybrid integration need to consider Electrostatic Discharge (ESD) protection early in the design, even for die-2-die interfaces that remain inside the package. There are several challenges but also opportunities. The use of a local ESD protection clamp at the TSV offers more robustness, higher performance, more flexibility, all in a strongly reduced silicon footprint.

Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

ESD protection of interfaces with thin gate oxide transistors

How do you protect chip interfaces that require thin gate (core) transistors in advanced CMOS, SOI of FinFET processes? How do you ensure sufficient ESD robustness? Conventional ESD protection is not sufficient. Discover the background for that and a solution as well in this article. The answer is found in a strategy of local clamping with power-efficient devices.

ESD protection for 2.5D and 3D packages

A growing number of semiconductor applications are turning to 2.5D and 3D integration. Integrating multiple dies in a single package can reduce total power consumption, reduce required PCB area, enhance performance and it can speed up development cycles.

It is important to consider Electrostatic Discharge (ESD) protection early in the design phase. The 2.5D and 3D hybrid integration introduces new ESD challenges but also opportunities.