Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

Sofics’ 2021 IEDS publication.
Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

Selecting optimized ESD protection for CMOS image sensors

Today, you can find CMOS image sensors almost everywhere in consumer, automotive, health and security applications. There has been a lot of innovation to enable demanding requirements.

The article provides a summary about the 3 main aspects that IC designers need to consider when selecting the ESD protection clamps for their image sensor projects.

Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes

Engineers developing semiconductor devices in the most advanced FinFET technology need improved ESD protection solutions.

We demonstrate ESD protection solutions based on proprietary Silicon Controlled Rectifiers verified on the Samsung Foundry 8nm and 4nm FinFET process.

Optimized Local I/O ESD Protection in FinFET Technology for 2.5D and 3D hybrid integration

Semiconductor companies using 2.5D and 3D hybrid integration need to consider Electrostatic Discharge (ESD) protection early in the design, even for die-2-die interfaces that remain inside the package. There are several challenges but also opportunities. The use of a local ESD protection clamp at the TSV offers more robustness, higher performance, more flexibility, all in a strongly reduced silicon footprint.

Optimized IP for GF’s 22nm FDX technology

The 22nm FDX process from GlobalFoundries is a great technology for various applications including low-power IoT on the edge, high-bandwidth 5G mmWave devices and automotive products, Since its market introduction, the SOI process technology receives a lot of attention because it combines unique features in one platform.

Sofics supported a number of products on the 22FDX technology like low-leakage protection for IoT and Bluetooth applications.

Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology

Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.

Applying System level ESD (IEC 61000-4-2) stress on ICs

Despite the fact that IEC 61000-4-2 is a standard created for system level ESD stress it is frequently used for stand alone integrated circuits. The test approach for chips is not defined nor standardized for this requirement so it is important to have a discussion on the test conditions and acceptance criteria. This article outlines 3 aspects that need to be considered if on-chip ESD protection needs to withstand the IEC 61000-4-2 stress

ESD protection for SOI technology

SOI technology introduces several challenges for the ESD designer. This article provided more background and example data on these issues. Fortunately, there are several ways to overcome those challenges. Sofics has supported IC companies with novel ESD concepts that improve IC performance and increase the ESD robustness.

Comparing 22nm CMOS, 22nm SOI and 16nm FinFET technology (part 2)

IC designers that develop a new integrated circuit have many different foundry and process options. There are several aspects that need to be considered to make a rational decision and select the optimal process. One of those items is on-chip Electrostatic Discharge (ESD) protection. This article compares the properties of the major ESD device types for 3 process options: CMOS (22nm), thin-film FD-SOI (22nm) and first generation FinFET (16nm) technology.

Comparing 22nm CMOS, 22nm SOI and 16nm FinFET technology (part 1)

IC designers that develop a new integrated circuit have many different foundry and process options. There are several aspects that need to be considered to make a rational decision and select the optimal process. One of those items is on-chip Electrostatic Discharge (ESD) protection. This article compares the properties of the major ESD device types for 3 process options: CMOS (22nm), thin-film FD-SOI (22nm) and first generation FinFET (16nm) technology.