Sofics’ 2021 IEDS publication.
Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.
Category Archives: SiGe BiCMOS
Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology
Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.
ESD protection solutions for space applications
We frequently get questions about the applicability of our ESD and I/O solution IP for space applications. Semiconductor devices that are used at high elevation or in space need special attention during the design phase. Sofics technology has been used for a number of aerospace projects. In this article we provide more background and some example cases.
SOFICS - Solutions for ICs 