Space applications require custom I/O and ESD protection solutions. Sofics proprietary ESD technology has been used for a number of aerospace projects. Our engineers delivered custom rad-hard ESD devices for TSMC 28nm, 65nm and 130nm CMOS technologies. The cells enable low power design in an extended temperature range. Different concepts are used to enable cold-spare interfaces. Low voltage triggered solutions are available for protection of thin oxide interface circuits.
The 22nm FDX process from GlobalFoundries is a great technology for various applications including low-power IoT on the edge, high-bandwidth 5G mmWave devices and automotive products, Since its market introduction, the SOI process technology receives a lot of attention because it combines unique features in one platform. At the 2021 GTC event, GlobalFoundries said thatContinue reading “Optimized IP for GF’s 22nm FDX technology”
We frequently get questions about the applicability of our ESD and I/O solution IP for space applications. Semiconductor devices that are used at high elevation or in space need special attention during the design phase. Sofics technology has been used for a number of aerospace projects. In this article we provide more background and some example cases.
In this article, I wish to introduce you to how we can use diode triggered silicon controlled rectifiers (DTSCRs) for on-chip ESD protection. I will explain how its 3 main parameters – trigger voltage, holding voltage and failure current – can be tuned in order to protect ICs with very different characteristics.
Semiconductor circuits used for Near Field Communication (NFC) need to be protected against excessive voltage. Two different approaches are discussed.