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ESD Protection for a High Voltage Tolerant Driver Circuit in 4nm FinFET Technology
Breakthrough in area efficiency of on-chip ESD protection.
ESD basic: Silicon Control Rectifier (SCR)
Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology
Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes
Protection of CMOS output drivers
ESD protection for SOI technology
Comparing 22nm CMOS, 22nm SOI and 16nm FinFET technology (part 2)
Comparing 22nm CMOS, 22nm SOI and 16nm FinFET technology (part 1)
CDM robustness of SCR protection devices
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