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Silicon controlled rectifier
ESD Protection for a High Voltage Tolerant Driver Circuit in 4nm FinFET Technology
Breakthrough in area efficiency of on-chip ESD protection.
ESD basic: Silicon Control Rectifier (SCR)
Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology
Selecting optimized ESD protection for CMOS image sensors
Optimized ESD protection based on Silicon Controlled Rectifiers (SCR), verified on Samsung Foundry 4nm and 8nm FinFET processes
Optimized Local I/O ESD Protection in FinFET Technology for 2.5D and 3D hybrid integration
Optimized IP for GF’s 22nm FDX technology
Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and FinFET Technology
Applying System level ESD (IEC 61000-4-2) stress on ICs
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