Sofics’ 2021 IEDS publication.
Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.
Due to the semiconductor shortage in 2021 everyone realized that cars these days integrate a lot of electronics. The average number of computer chips per car has increased a lot in the last decade.
It is clear that the new applications require high-speed interconnects that are not possible with the initial, low-speed interface types. But there is also innovation possible for the old interface types like LIN/CAN by combining it together with other IP blocks on a single die.
Today, you can find CMOS image sensors almost everywhere in consumer, automotive, health and security applications. There has been a lot of innovation to enable demanding requirements.
The article provides a summary about the 3 main aspects that IC designers need to consider when selecting the ESD protection clamps for their image sensor projects.
EOS, or Electrical Overstress, is any electrical stress that exceeds any of the specified absolute maximum ratings (AMR) of a product.
It is important to discuss because many products are damaged this way.
This article includes case studies and 3 approaches to handle those requests.
In the past most Electronic Control Units (ECU) used CAN and LIN interfaces to connect to sensors, actuators and each other. However, the newest applications need (much) faster communication options. Gigabit automotive ethernet is pushed by many in the industry as the perfect solution.
With its local ESD clamp approach, Sofics provides the best solution to protect those high-speed chip interfaces against Electrostatic Discharge events.
There are many different approaches to ensure effective ESD protection for integrated circuits. It is important to select the right approach for each interface and power domain. This article outlines the main options for Interface protection.
Engineers developing semiconductor devices in the most advanced FinFET technology need improved ESD protection solutions.
We demonstrate ESD protection solutions based on proprietary Silicon Controlled Rectifiers verified on the Samsung Foundry 8nm and 4nm FinFET process.
For many years, IC designers coult count on the snapback behaviour of the ggNMOS device for ESD protection in mature CMOS nodes (180nm and below).
However, for more advanced CMOS, FinFET, SOI and high voltage processes there are serious drawbacks.
Space applications require custom I/O and ESD protection solutions. Sofics proprietary ESD technology has been used for a number of aerospace projects. Our engineers delivered custom rad-hard ESD devices for TSMC 28nm, 65nm and 130nm CMOS technologies. The cells enable low power design in an extended temperature range. Different concepts are used to enable cold-spare interfaces. Low voltage triggered solutions are available for protection of thin oxide interface circuits.
Semiconductor companies using 2.5D and 3D hybrid integration need to consider Electrostatic Discharge (ESD) protection early in the design, even for die-2-die interfaces that remain inside the package. There are several challenges but also opportunities. The use of a local ESD protection clamp at the TSV offers more robustness, higher performance, more flexibility, all in a strongly reduced silicon footprint.